The magnetic domain texture inherent to magnetic domain walls holds potential for spintronic applications. The electrical resistance in ferromagnets depends on whether domain walls are or not present. This binary effect (known as domain wall magnetoresistance) could be used to encode information in spintronic memory devices. Yet, their exploitation is hindered due to the small changes in resistance observed for normal ferromagnets. A particularly interesting class of materials are manganite perovskites such as La2/3Sr1/3MnO3 (LSMO). These compounds present only one type of spin (full spin polarization) which could potentially lead to domain wall magnetoresistance effects large enough to be exploited in a new generation of spintronic sensors and injectors.
Despite this promising perspective, there exist large discrepancies in the reported values of the domain wall magnetoresistance for this system. The scientists from Spain, France and Germany have fabricated nanowire-based devices enabling the nucleation of individual magnetic domain walls. Magneto transport measurements in these devices show that the presence of a domain wall leads to an increase of the electrical resistance of up to 12%. In absolute terms, the observed resistance change is 20 times larger than that reported for Cobalt.
