The last experimentally fundamental passive circuit element is the memristor that was originated in 2008 by Dmitri Strukov and presents a thin-film dielectric material with oxygen vacancies placed between two electrodes. This element changes its resistance based on the amount and direction of current that has flowed through it and its resistance has non-linear behavior from the current flow. Memristors are used in neuromorphic computing, data storage systems, and various devices for information processing and consume less power than basic silicon transistors. These elements are an attractive subject for modern scientific community due to their advantages of some characteristics: fast read time, quick write/erase time together with potentially infinite retention time and ability to store a large amount of data in a compact size.
These features can be used not only to develop more advanced information storage systems but also to implement memristors in data stream processing. Since processing is performed directly in the memory element, this ensures cost-effective and energy-efficient real-time computations. The application of artificial intelligence will benefit from the use of neuromorphic processors, including those based on memristors . These systems will allow neural networks to learn locally, even on smartphones. Today, researchers are developing various memristor systems that could potentially be used for machine vision, acoustic-speech systems, and even as bio interfaces.
The selection of a material semiconductor, as well as contact, the element size and quality define key physical properties and memristor long-term stability. Today lead halide perovskite polycrystalline films or microparticles can be considered as a new gold rush in terms of various semiconductor device fabrication: solar cells, photodiodes, LED, LEC, scintillators, sensors as well as a good semiconductor for memristors with and without filament generation.
Despite many previous researches reported about conductive filament formation in thin film perovskite films, which is responsible for switch of resistance and forms at contact with metal, it is still difficult to talk confidently about stable electric characteristics of these perovskite memristors under voltage load. Although some perovskite-based devices with metallic electrodes exhibit low stability under varying environmental conditions at room humidity and temperature-assisted penetration of metal ions, which may spoil a semiconductor material. Key issues include cycling endurance switching optimization, power consumption reduction, and miniaturization of a single element. Another problem is the understanding of the underlying switching mechanisms, and more research is needed to elucidate the role of defects and ion migration in the performance of perovskite memristors.
About the Research Group:
The research group of Prof. Makarov under Prof. Furasova supervision from ITMO University (Russia) and Harbin Engineering University (China) introduce one of the smallest memristor based on perovskite semiconductor. Their memristor is based on a monocrystal nanocube with chemical composition of CsPbBr3, one of the most chemically resistant lead - halide perovskite
